2SD1963 Datasheet, PDF (1/3 Pages) Rohm – Power transistor (50V, 3A)

Transistors
Power transistor (50V, 3A)
2SD1963
2SD1963
zFeatures
1) Low saturation voltage, typically
VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A.
2) Excellent DC current gain characteristics.
3) Complements the 2SB1308.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3
IC
5
0.5
Collector power dissipation
PC
2.0
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) _∗1
W
W _∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
180
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
∗ Measured using pulse current.
Typ.
−
−
−
−
−
−
0.25
150
35
Max.
−
−
−
0.5
0.5
560
0.45
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=50µA
IC= 1mA
IE= 50µA
VCB=40V
VEB=5V
VCE=2V, IC=0.5A
∗
IC/IB=1.5A/ 0.15A
∗
VCE=6V, IE= −50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
Rev.A
1/2