2SD1918_10 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (160V , 1.5A)

Power Transistor (160V , 1.5A)
2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BVCEO=160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB=10V)
3) High transition frequency.(fT=80MHZ)
4) Complements the 2SB1275.
Absolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1857A
2SD1918
Symbol
VCBO
VCEO
VEBO
IC
PC
Limits
160
160
5
1.5
3
1
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 ∼+150
∗ 1 Pw=200msec duty=1/2
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm² or larger.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
∗2
W
W(Tc=25°C)
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
* Denotes hFE
2SD1918
CPT3
QR
−
TL
2500
2SD1857A
ATV
PQ
−
TV2
2500
Dimensions (Unit : mm)
2SD1918
5.5 1.5
ROHM : CPT3
EIAJ : SC-63
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1857A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
160
−
−
V
IC = 50μA
Collector-emitter breakdown voltage
BVCEO
160
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50μA
Collector cutoff current
ICBO
−
−
1
μA
VCB = 120V
Emitter cutoff current
IEBO
−
−
1
μA
VEB = 4V
Collector-emitter saturation voltage
VCE(sat)
−
−
2
V
IC/IB = 1A/0.1A
∗
Base-emitter saturation voltage
VBE(sat)
−
−
1.5
V
IC/IB = 1A/0.1A
∗
DC current
transfer ratio
2SD1918
2SD1857A
120
−
390
−
hFE
VCE/IC = 5V/0.1A
82
−
270
−
Transition frequency
fT
−
80
−
MHz VCE = 5V , IE = −0.1A , f = 30MHz
Output capacitance
Cob
−
20
−
pF
VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
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2010.09 - Rev.C