2SD1898_12 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor

Power Transistor (80V, 1A)
2SD1898 / 2SD1733
Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 / 2SB1181
Structure
Epitaxial planer type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1898
4.5^{+−00..21}
1.6±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
2SD1733
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_{−+00..015}
Abbreviated symbol : DF
6.5±0.2
5.1^{+−00..21}
C0.5
2.3^{+−00..21}
0.5±0.1
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
120
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
1
IC
2
0.5
2SD1898
Collector power
dissipation
2
PC
1
2SD1733
10
Junction temperature
Tj
150
Storage temperature
Tstg
∗1 Pw=20ms, duty=1 / 2
∗2 When mounted on a 40×40×0.7mm ceramic board.
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W
W ∗2
W
W (Tc=25°C)
°C
°C
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2012.01 - Rev.E