2SD1898_09 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (80V, 1A)

Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
Structure
Epitaxial planer type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1898
4.5^{+−00..21}
1.6±0.1
1.5_{−+00..12}
ROHM : MPT3
EIAJ : SC-62
2SD1733
6.5±0.2
5.1^{+−00..21}
C0.5
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_{−+00..015}
Abbreviated symbol : DF
2SD1768S
2.3^{+−00..21}
0.5±0.1
4±0.2
(1) Base
(2) Collector
(3) Emitter
2±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
0.55±0.1
1.0±0.2
ROHM : CPT3
EIAJ : SC-63
2SD1863
6.8±0.2
(1) Base
(2) Collector
(3) Emitter
2.5±0.2
0.45^{+−00..1055}
2.5^{+−00..41}
5
0.5 ^0.45−+00..0155
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
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2009.12 - Rev.C