2SD1864 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (50V, 3A)

Power Transistor (50V, 3A)
2SD1864
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1243.
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1864
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
3
A (DC)
IC
4.5
A (Pulse) ^∗1
Collector power dissipation
PC
1
W
∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse, PW=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO 60
−
−
V IC=50μA
Collector-emitter breakdown voltage BVCEO 50
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V IE=50μA
Collector cutoff current
ICBO
−
−
1
μA VCB=40V
Emitter cutoff current
IEBO
−
−
1
μA VEB=4V
Collector-emitter saturation voltage
VCE (sat)
−
0.5
1
V IC/IB=2A/0.2A
∗
DC current transfer ratio
hFE
120
−
390
−
VCE=3V, IC=0.5A
∗
Transition frequency
fT
−
90
− MHz VCE=5V, IE=−500mA, f=30MHz
∗
Output capacitance
Cob
−
40
−
pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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2010.04 - Rev.B