2SD1858 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A)
2SD1858
Features
1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA)
2) Compliments 2SB1237
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
6.8 ^+− 0.2
2.5 +− 0.2
0.5^+− 0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45 +− 0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
1
A (DC)
IC
2
A (Pulse) ∗1
Collector power dissipation
PC
1
W _∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw=20ms, duty=1/2
∗2 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1
square CM or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 32
Emitter-base breakdown voltage
BVEBO
5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
0.15
150
15
Max.
−
−
−
0.5
0.5
390
0.4
−
−
Unit
V
V
V
μA
μA
−
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=20V
VEB=4V
VCE=3V, IC=100mA
IC/IB=500mA / 50mA
VCE=5V, IE= −50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
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2010.04 - Rev.B