2SD1857_09 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (120V, 2A)

Power Transistor (120V, 2A)
2SD1857
Features
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
Dimensions (Unit : mm)
2SD1857
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
ROHM : ATV
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and hFE
Type
Package
Code
hFE Basic ordering unit (pieces)
2SD1857 QR
Taping
TV2
2500
hFE values are classified as follows:
Item
hFE
Q
R
120 to 270 180 to 390
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
ICP ∗1
3
A
Collector power dissipation
PC ∗2
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw = 10ms
∗2 When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more.
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
120
−
−
V
IC = 50μA
BVCEO
120
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50μA
Collector cutoff current
ICBO
−
−
1
μA VCB = 100V
Emitter cutoff current
IEBO
−
−
1
μA VEB = 4V
Collector-emitter saturation voltage
VCE(sat)
−
−
2
V
IC/IB = 1A/0.1A
∗
DC current transfer ratio
hFE
120
−
390
−
VCE/IC = 5V/0.1A
Transition frequency
fT
−
80
−
MHz VCE = 5V , IE = −0.1A , f = 30MHz
Output capacitance
Cob
−
20
−
pF VCB = 10V , IE = 0A , f = 1MHz
∗
∗ ^{Measured using pulse current.}
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2009.12 - Rev.E