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2SD1834_10 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (60V, 1A) | |||
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Medium Power Transistor (60V, 1A)
2SD1834
ï¬Features
1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)
2) High input impedance.
ï¬Inner circuit
C
B
ï¬Dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
E
B : Base
C : Collector
E : Emitter
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCES
60
Emitter-base voltage
VEBO
7
Collector current
1
IC
2
Collector power dissipation
PC
0.5
2 â3
Junction temperature
Tj
150
Storage temperature
Tstg â55 to +150
â1 Single pulse Pw=100ms
â2 RBE=0Ω
â3 Mounted on a 40Ã40Ã t 0.7mm ceramic substrate
Unit
V
V
â2
V
A(DC)
A(Pulse) â1
W
°C
°C
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
60
â
â
V
IC=50μA
BVCEO
60
â
â
V
IC=100μA , RBE=0Ω
Emitter-base breakdown voltage
BVEBO
7
â
â
V
IE=50μA
Collector cutoff current
ICBO
â
â
1
μA VCB=60V
Emitter cutoff current
IEBO
â
â
1
μA VEB=6V
DC current transfer ratio
hFE
2000
â
â
â
VCE/IC=3V/500mA
â
Collector-emitter saturation voltage
VCE(sat)
â
0.9
1.5
V
IC/IB=500mA/500μA
Transition frequency
fT
â
150
â
MHz VCE=5V , IE= â10mA , f=100MHz
Output capacitance
Cob
â
7
â
pF VCE=10V , IE=0A , f=1MHz
â Measured using pulse current.
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.B
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