2SD1782K Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (80V, 0.5A)

Transistors
Power Transistor (80V, 0.5A)
2SD1782K
2SD1782K
zFeatures
1) Low VCE(sat).
VCE(sat) =0.2V(Typ.)
(IC / IB=0.5 A / 50mA)
2) High VCEO, VCEO=80V
3) Complements the 2SB1198K.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1^+−_00..12
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
∗ Denotes hFE
(3)
0.4
+0.1
−0.05
All terminals have
same dimensions
0.15_{−+00..016}
∗ Abbreviated symbol : AJ
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Rev.A
1/3