2SD1781K_08 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 0.8A)

Transistors
2SD1781K
Medium Power Transistor (32V, 0.8A)
2SD1781K
zFeatures
1) Very Low VCE(sat).
VCE(sat) = 0.1V(Typ.)
̈́IC / IB= 500УA / 50mAͅ
2) High current capacity in compact package.
3) Complements the 2SB1197K.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1^+−_00..12
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
∗ Denotes hFE
(3)
0.4
+0.1
−0.05
All terminals have
same dimensions
0.15_{−+00..016}
∗ Abbreviated symbol : AF
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage temperature
∗ Single pulse Pw=100ms
Tstg
Limits
40
32
5
0.8
1.5
200
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ∗
mW
°C
°C
Rev.A
1/3