2SD1767 Datasheet, PDF (1/3 Pages) Rohm – Medium power transistor (80V, 0.7A)

Transistors
2SD1767 / 2SD1859
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
zFeatures
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SB1189 / 2SB1238.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
IC
0.7
ICP
1
Collector power
dissipation
2SD1767
PC
2SD1859
0.5
2 ∗2
1 ∗3
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗^{Denotes hFE}
2SD1767
MPT3
PQR
DC_∗
T100
1000
2SD1859
ATV
QR
−
TV2
2500
zExternal dimensions (Unit : mm)
2SD1767
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SD1859
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ. Max.
Unit
Conditions
80
−
−
V
IC=50µA
80
−
−
V
IC=2mA
5
−
−
V
IE=50µA
−
−
0.5
µA VCB=50V
−
−
0.5
µA VEB=4V
−
0.2
0.4
V
IC/IB=500mA/50mA
120
−
390
−
VCE/IC=3V/0.1A
−
120
−
MHz VCE=10V, IE=−50mA, f=100MHz
−
10
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/2