2SD1766T100Q Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (32V, 2A)

Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Dimensions (Unit : mm)
2SD1766
4.5^{+−00..21}
1.6±0.1
1.5
+0.2
−0.1
2SD1758
6.5±0.2
5.1^{+−00..21}
C0.5
2.3^{+−00..21}
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4
+0.1
−0.05
Abbreviated symbol : DB∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD1862
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
32
Emitter-base voltage
VEBO
5
Collector current
2
IC
2.5 ∗1
Collector
power
dissipation
2SD1766
2SD1758
2SD1862
0.5
2 ^∗2
PC
10
1 ∗3
Junction temperature
Tj
150
Storage temperature
Tstg −55~+150
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm² or lager.
Unit
V
V
V
A (DC)
A (Pulse)
W
W (TC=25°C)
W
°C
°C
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2009.12 - Rev.B