2SD1758 Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Medium power transistor (32V, 2A)
2SD1758 / 2SD1862
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Dimensions (Units : mm)
2SD1758
6.5±0.2
5.1^{+−00..21}
C0.5
2.3^{+−00..21}
0.5±0.1
2SD1862
6.8±0.2
2.5±0.2
Structure
Epitaxial planar type NPN silicon transistor
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1758
2SD1862
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
40
V
32
V
5
V
2
A (DC)
2.5
A (Pulse) ∗1
10
W (TC=25°C)
1
W ^∗2
150
°C
−55 to +150
°C
∗1 Single pulse, PW=20ms
∗2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm² or lager.
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 40
−
−
V IC=50μA
Collector-emitter breakdown voltage BVCEO 32
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO 5
−
−
V IE=50μA
Collector cutoff current
ICBO
−
−
1
μA VCB=20V
Emitter cutoff current
IEBO
−
−
1
μA VEB=4V
DC current transfer ratio
hFE
120
−
390
− VCE=3V, IC=0.5A
∗
Collector-emitter saturation voltage VCE(sat) −
0.5 0.8
V IC/IB=2A/0.2A
∗
Transition frequency
fT
−
100
− MHz VCE=5V, IE=−50mA, f=100MHz ^∗
Output capacitance
Cob
−
30
−
pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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2010.04 - Rev.C