2SD1757KT146Q Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (15V, 0.5A)

Transistors
Power Transistor (15V, 0.5A)
2SD1757K
2SD1757K
zFeatures
1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA)
2) Optimal for muting.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
6.5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zExternal dimensions (Unit : mm)
1.6
2.8
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD1757K
SMT3
QRS
AA ^∗
T146
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
30
−
−
V IC=50µA
15
−
−
V IC=1mA
6.5
−
−
V IE=50µA
−
−
0.5
µA VCB=20V
−
−
0.5
µA VEB=4V
−
0.1
0.4
V IC/IB=500mA/50mA
120
−
560
− VCE/IC=3V/100mA
−
150
−
MHz VCE=5V , IE=−50mA , f=100MHz
−
15
−
pF VCB=10V , IE=0A , f=1MHz
Rev.A
1/3