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2SD1664_09 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 1A) | |||
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Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
ï¬Features
1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA)
2) Compliments 2SB1132 / 2SB1237
ï¬Structure
Epitaxial planar type
NPN silicon transistor
ï¬Dimensions (Unit : mm)
2SD1664
4.5+â00..12
1.6 +â 0.1
1.5â+00..12
2SD1858
6.8 +â 0.2
2.5 +â 0.2
(1) (2) (3)
0.4 +â 0.1
1.5 +â 0.1
0.5 +â 0.1
3.0 +â 0.2
0.4 +â 0.1
1.5 +â 0.1
â Abbreviated symbol: DA
ROHM : MPT3
EIAJ : SC-62
â Denotes hFE
0.65Max.
0.4â+00..015
0.5+â 0.1
(1) (2) (3)
2.54 2.54
(1) Base
(2) Collector
(3) Emitter
ROHM : ATV
1.05
0.45 +â 0.1
(1) Emitter
(2) Collector
(3) Base
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
Collector
2SD1664
PC
power dissipation
2SD1858
Junction temperature
Tj
1
A (DC)
2
A (Pulse) â1
0.5
2
W â2
1
â3
150
°C
Storage temperature
Tstg
â55 to +150
°C
â1 Pw=20ms, duty=1/2
â2 When mounted on a 40 +40 +0.7 mm ceramic board.
â3 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1
square CM or larger.
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 32
Emitter-base breakdown voltage
BVEBO
5
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE(sat) â
Transition frequency
fT
â
Output capacitance
Cob
â
Typ.
â
â
â
â
â
â
0.15
150
15
Max.
â
â
â
0.5
0.5
390
0.4
â
â
Unit
V
V
V
μA
μA
â
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=20V
VEB=4V
VCE=3V, IC=100mA
IC/IB=500mA / 50mA
VCE=5V, IE= â50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
www.rohm.com
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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