2SD1468S_09 Datasheet, PDF (1/4 Pages) Rohm – Muting Transistor (15V, 1A)

Muting Transistor (15V, 1A)
2SD1468S
Features
1) Low saturation voltage, typically VCE(sat) = 0.08V at
Ic / IB = 500mA / 500A.
2) Ideal for low voltage, high current drives.
3) High DC current gain and high current.
Dimensions (Unit : mm)
SPT
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
Absolute maximum ratings (Ta=25_C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCES
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector power dissipation
PC
0.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
Electrical characteristics (Ta=25_C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
Typ.
Max.
Unit
Conditions
30
−
−
V
IC=50μA
15
−
−
V
IC=1mA
5
−
−
V
IE=50μA
−
−
0.5
μA VCB=20V
−
−
0.5
μA VEB=4V
−
0.08
0.4
V
IC/IB=0.5mA/50mA
120
−
390
−
VCE/IC=3V/0.1A
50
150
−
MHz VCE=5V , IE= −50mA , f=100MHz
−
15
30
pF VCE=10V , IE=0A , f=1MHz
Packaging specifications and hFE
Type
2SD1468S
Package
hFE
Code
Basic ordering unit (pieces)
SPT
QRS
TP
5000
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2009.12 - Rev.B