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2SD1383K_11 Datasheet, PDF (1/3 Pages) Rohm – High-gain Amplifier Transistor | |||
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High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
ï¬Features
1) Darlington connection for high DC current gain.
2) Built-in 4kï resistor between base and emitter.
3) Complements the 2SB852K.
ï¬Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SD1383K
SMT3
B
Wâ
T146
3000
ï¬Dimensions (Unit : mm)
2SD1383K
(1)Emitter
(2)Base
(3)Collector
Each lead has same dimensions
ï¬Circuit diagram
C
B
RBE 4kΩ
E : Emitter
B : Base
C : Collector
E
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
â1 RBE=0Ω
â2 Single pulse Pw=10ms
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
â55 to +150
Unit
V
V â1
V
A (DC)
A (Pulse) â2
W
°C
°C
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
â1 Measured using pulse current.
â2 Transition frequency of the device.
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
www.rohm.com
âc 2011 ROHM Co., Ltd. All rights reserved.
Min.
40
32
6
â
â
5000
â
â
â
Typ.
â
â
â
â
â
â
â
250
3
Max.
â
â
â
1
1
â
1.5
â
â
Unit
V
V
V
μA
μA
â
V
MHz
pF
Conditions
IC=100μA
IC= â1mA , RBE=0Ω
IE=100μA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
â1
VCE=5V, IE= â10mA, f=100MHz â2
VCB=10V, IE=0A, f=1MHz
1/2
2011.10 - Rev.D
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