2SD1383K_1 Datasheet, PDF (1/3 Pages) Rohm – High-gain Amplifier Transistor (32V , 0.3A)

Transistors
2SD1383K
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD852.
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD1383K
SMT3
B
W∗
T146
3000
zCircuit diagram
C
zExternal dimensions (Unit : mm)
2SD1383K
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
B
RBE 4kΩ
E : Emitter
B : Base
C : Collector
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 RBE=0Ω
∗2 Single pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
−55 to +150
Unit
V
V ∗1
V
A (DC)
A (Pulse) ∗2
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
250
3
Max.
−
−
−
1
1
−
1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=100µA
IC= −1mA , RBE=0Ω
IE=100µA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
∗1
VCE=5V, IE= −10mA, f=100MHz ∗2
VCB=10V, IE=0A, f=1MHz
Rev.B
1/2