2SCR554R Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (80V / 1.5A)

Midium Power Transistors (80V / 1.5A)
2SCR554R
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = 0.3V (Max.) (I_C / I_B= 500mA / 25mA)
2) High speed switching
 Dimensions (Unit : mm)
TSMT3
(3)
 Structure
NPN Silicon epitaxial planar transistor
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
Abbreviated symbol : NH
 Applications
Driver
 Inner circuit
(3)
 Packaging specifications
Type
Package
TSMT3
Code
TL
Basic ordering unit (pieces) 3000
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
80
V
V_CEO
80
V
V_EBO
6
V
I_C
1.5
A
I_CP *1
3
A
P_D ^*2
0.5
W
P_D ^*3
1.0
W
T_j
150
C
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm³] ceramic substrate.
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2010.06 - Rev.A