2SCR544R_10 Datasheet, PDF (1/5 Pages) Rohm – Midium Power Transistors (80V / 2.5A)

Midium Power Transistors (80V / 2.5A)
2SCR544R
 Structure
NPN Silicon epitaxial planar transistor
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = 0.3V (Max.) (I_C / I_B= 1A / 50mA)
2) High speed switching
 Applications
Driver
 Packaging specifications
Package
Type _Code
Taping
TL
Basic ordering unit (pieces) 3000
2SCR544R

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
80
V
V_CEO
80
V
V_EBO
6
V
I_C
2.5
A
I_CP ^*1
5
A
P_D ^*2
0.5
W
P_D ^*3
1
W
T_j
150
C
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
 Dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
Abbreviated symbol : NS
 Inner circuit (Unit : mm)
(3)
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
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2010.02 - Rev.A