2SCR544D Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (80V / 2.5A)

Midium Power Transistors (80V / 2.5A)
2SCR544D
 Structure
NPN Silicon epitaxial planar transistor
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = 0.3V (Max.) (I_C / I_B= ₁A / 50mA)
2) High speed switching
 Applications
Driver
 Dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
0.75
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
CPT3
TL
2500
 Inner circuit
(2)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
80
V
V_CEO
80
V
V_EBO
6
V
I_C
2.5
A
I_CP ^*1
5
A
P_D ^*2
1
W
P_D ^*3
10
W
T_j
150
C
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate.
*3 Tc=25℃
(1)
(1) Base
(2) Collector
(3) Emitter
(3)
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.A