2SCR543R Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (50V / 3A)

Midium Power Transistors (50V / 3A)
2SCR543R
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT3
 Features
1) Low saturation voltage
V_{CE (sat)} = 0.35V (Max.) (I_C / I_B= 2A / 100mA)
2) High speed switching
 Applications
Driver
(3)
(1)
(2)
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : NR
 Packaging specifications
Type
Package
TSMT3
Code
TL
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
50
V
V_CEO
50
V
V_EBO
6
V
I_C
3
A
I_CP *1
6
A
P_D ^*2
0.5
W
P_D ^*3
1.0
W
T_j
150
°C
T_stg -55 to 150
°C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40×40×0.7[mm] ceramic substrate.
 Inner circuit (Unit : mm)
(3)
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.12 - Rev.A