2SCR522M Datasheet, PDF (1/3 Pages) Rohm – General purpose transistor(20V,0.2A)

General purpose transistor(20V,0.2A)
2SCR522M / 2SCR522EB / 2SCR522UB
Structure
NPN silicon epitaxial planar transistor
Features
Complements the 2SAR522M / 2SAR522EB / 2SAR522UB.
Dimensions (Unit : mm)
VMT3
Applications
Switch, LED driver
Packaging specifications
Package
Type
Packaging Type
Code
Basic ordering
unit (pieces)
2SCR522M
2SCR522EB
2SCR522UB
VMT3
Taping
T2L
8000
EMT3F
Taping
TL
3000
UMT3F
Taping
TL
3000
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
ICP ^∗1
400
mA
Power
2SCR522M,2SCR522EB
PD ^∗2
150
mW
dissipation _2SCR522UB
200
mW
Junction temperature
Tj
150
°C
Range of storage temperature Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
EMT3F
Abbreviated symbol : NC
UMT3F
(3)
(1)
(2)
Abbreviated symbol : NC
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : NC
Inner circuit
(3)
(1)
(1) Base
(2) Emitter
(2)
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
20
−
−
V IC=1mA
20
−
−
V IC=50μA
5
−
−
V IE=50μA
−
−
0.1 μA VCB=20V
−
−
0.1 μA VEB=5V
− 0.12 0.30 V IC=100mA, IB=10mA
120
−
560
− VCE=2V, IC=1mA
− 400 − MHz VCE=10V, IE=−10mA, f=100MHz
−
2
−
pF VCB=10V, IE=0A, f=1MHz
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2010.09 - Rev.A