2SCR372P Datasheet, PDF (1/5 Pages) Rohm – Midium Power Transistors (120V / 700mA)

Data Sheet
Midium Power Transistors (120V / 700mA)
2SCR372P
 Structure
NPN Silicon epitaxial planar transistor
 Features
Low saturation voltage
V_{CE (sat)} = 0.3V (Max.) (I_C / I_B= 500mA / 50mA)
 Dimensions (Unit : mm)
MPT3
(1) (2) (3)
 Applications
Driver
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : GX
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
2SCR372P
hFE values are classified follows :
Item
Q
R
hFE 120 to 270 180 to 390
Taping
T100
1000

 Inner circuit (Unit : mm)
(2)
(1)
(1) Base
(2) Collector
(3) Emitter
(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
120
V
V_CEO
120
V
V_EBO
6
V
I_C
0.7
A
I_CP *1
1.4
A
P_D ^*2
0.5
W
P_D ^*3
2
W
T_j
150
C
T_stg 55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm)
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2011.04 - Rev.A