2SCR293P Datasheet, PDF (1/6 Pages) Rohm – Midium Power Transistors (30V / 1A)

Midium Power Transistors (30V / 1A)
2SCR293P
 Structure
NPN Silicon epitaxial planar transistor
 Features
Low saturation voltage
V_{CE (sat)} = 0.35V (Max.) (I_C / I_B= 500mA / 25mA)
 Dimensions (Unit : mm)
MPT3
(SC-63)
<SOT-428>
(1) (2) (3)
 Applications
Driver
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
MPT3
T100
1000
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
30
V
V_CEO
30
V
V_EBO
6
V
I_C
1
A
I_CP *1
2
A
P_D ^*2
0.5
W
P_D ^*3
2.0
W
T_j
150
°C
T_stg -55 to 150
°C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land
*3 Mounted on a 40×40×0.7 [mm] ceramic substrate
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : NV
 Inner circuit (Unit : mm)
(2)
(1)
(1) Base
(2) Collector
(3) Emitter
(3)
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2010.12 - Rev.A