2SC5875 Datasheet, PDF (1/4 Pages) Rohm – Power transistor (30V, 2A)

Transistors
Power transistor (30V, 2A)
2SC5875
2SC5875
!Features
1) High speed switching.
(Tf : Typ. : 20ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0A, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2087
!Applications
Low frequency amplifier
High speed switching
!External dimensions (Unit : mm)
ATV
6.8
2.5
0.65Max.
(1) Emitter
(2) Collector
(3) Base
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
Symbol : C5875
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Type
2SC5875
Package
Code
Basic ordering unit (pieces)
Taping
TV2
2500
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
DC
IC
Collector current
Pulsed
ICP
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
PC
Tj
Tstg
Limits
30
30
6
2
4
1.0
150
−55 to 150
Unit
V
V
V
A
A
∗
W
°C
°C
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