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2SC5874S Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (30V, 1.0A)
Transistors
2SC5874S
Medium power transistor (30V, 1.0A)
2SC5874S
!Features
1) High speed switching.
(Tf : Typ. : 35ns at IC = 1.0A)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 1.0A, IB = 100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2086S
!Applications
Small signal low frequency amplifier
High speed switching
!External dimensions (Unit : mm)
SPT
4.0
2.0
0.45
(1) Emitter
(2) Collector
(3) Base
2.5
5.0
0.5 0.45
(1) (2) (3)
Taping specifications
Symbol : C5874S
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Type
2SC5874S
Package
Code
Basic ordering unit (pieces)
Taping
TP
5000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.0
2.0
300
150
−55 to 150
Unit
V
V
V
A
A ∗1
mW ∗2
°C
°C
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