2SC5511 Datasheet, PDF (1/2 Pages) Rohm – For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)

Transistors
2SC5511
For Audio Amplifier output - TV Velosity
Modulation (160V, 1.5A)
2SC5511
zStructure
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) Electrical characteristics of DC current gain hFE is flat.
2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA)
3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz)
4) Wide SOA.
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Power amplifier
Velosity modulation
zComplements
PNP
2SA2005
NPN
2SC5511
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature
∗1 t=100ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
Unit
160
V
160
V
5
V
1.5
A
3
A ^∗1
2
W(Ta=25°C)
20 W(Tc=25°C)
150
°C
−55 to +150
°C
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SC5511 E
Taping
−
500
hFE values are classified as follows:
Item
hFE
E
100 to 200
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
160 − − V IC=1mA
160 − − V IC=50µA
5 − − V IE=50µA
− − 1.0 µA VCB=160V
−
− 1.0 µA VEB=4V
− − 1.0 V IC/IB=1A/0.1A
− − 1.5 V IC/IB=1A/0.1A
100 − 200 − VCE=5V, IC=0.1A
− 150 − MHz VCE=10V, IE=−0.2A , f=100MHz
− 20 − pF VCB=10V , IE=0A , f=1MHz
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