2SC5161 Datasheet, PDF (1/4 Pages) Rohm – HIgh voltage switching transistor (400V, 2A)

Transistors
High voltage switching transistor
(400V, 2A)
2SC5161
2SC5161
zFeatures
1) Low VCE(sat).
VCE(sat)=0.15V (Typ.)
(IC/IB=1A/0.2A)
2) High breakdown voltage.
VCEO=400V
3) Fast switching.
tf ≤1.0µs
(IC=0.8A)
zStructure
Three-layer, diffused planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
6.5±0.2
5.1^{+−00..21}
C0.5
2.3
+0.2
−0.1
0.5±0.1
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
IC
Collector current
ICP
Collector power dissipation
PC
Junction temperature
Storage temperature
∗ Single pulse Pw=10ms
Tj
Tstg
Limits
400
400
7
2
4
1
10
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C
Rev.A
1/3