2SC5103_09 Datasheet, PDF (1/4 Pages) Rohm – High speed switching transistor (60V, 5A)

High speed switching transistor (60V, 5A)
2SC5103
Features
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 s at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C
Dimensions (Unit : mm)
5.5 1.5
0.9
C0.5
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
(1) Base
(2) Collector
(3) Emitter
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5103
CPT3
Q
TL
2500
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
∗ Measured using pulse current.
hFE
fT
Cob
ton
tstg
tf
Min.
100
60
5
−
−
−
−
−
−
120
40
−
−
−
−
−
Typ.
−
−
−
−
−
0.15
−
−
−
−
−
120
80
−
−
0.1
Max.
−
−
−
10
10
0.3
0.5
1.2
1.5
270
−
−
−
0.3
1.5
0.3
Unit
Conditions
V
IC = 50μA
V
IC = 1mA
V
IE = 50μA
μA VCB = 100V
μA VEB = 5V
V
IC/IB = 3A/0.15A
∗
V
IC/IB = 4A/0.2A
∗
V
IC/IB = 3A/0.15A
∗
V
IC/IB = 4A/0.2A
∗
−
VCE/IC = 2V/1A
−
VCE/IC = 2V/3A
MHz VCB = 10V , IE = −0.5A , f = 30MHz
pF VCE = 10V , IE = 0A , f = 1MHz
∗
μs IC = 3A , RL = 10Ω
μs IB1 = −IB2 = 0.15A
μs VCC 30V
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2009.12 - Rev.A