2SC5103 Datasheet, PDF (1/2 Pages) Rohm – High speed switching transistor (60V, 5A)

Transistors
2SC5103
High speed switching transistor (60V, 5A)
2SC5103
!Features
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
−55~+150
Unit
V
V
V
A(DC)
A(Pulse) ∗
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
5.5 1.5
0.9
C0.5
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5103
CPT3
PQ
TL
2500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
∗ Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
100
−
−
V
IC = 50µA
60
−
−
V
IC = 1mA
5
−
−
V
IE = 50µA
−
−
10
µA VCB = 100V
−
−
10
µA VEB = 5V
−
0.15
0.3
V
IC/IB = 3A/0.15A
∗
−
−
0.5
V
IC/IB = 4A/0.2A
∗
−
−
1.2
V
IC/IB = 3A/0.15A
∗
−
−
1.5
V
IC/IB = 4A/0.2A
∗
82
−
270
−
VCE/IC = 2V/1A
−
120
−
MHz VCB = 10V , IE = 0.5A , f = 30MHz
−
80
−
pF VCE = 10V , IE = 0A , f = 1MHz
∗
−
−
0.3
µs IC = 3A , RL = 10Ω
−
−
1.5
µs IB1 = −IB2 = 0.15A
−
0.1
0.3
µs VCC 30V