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2SC5060_09 Datasheet, PDF (1/4 Pages) Rohm – Power transistor (90+-10V, 3A)
Power transistor (9010V, 3A)
2SC5060
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L” loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Inner circuit
C
B
R1
R2
B : Base
C : Collector
E : Emitter
E
R1 3kΩ
R2 1kΩ
Dimensions (Unit : mm)
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
∗1 Single pulse Pw=10ms
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
Limits
90±10
90±10
6
1
2
1
150
−55 to +150
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5060
ATV
M
TV2
2500
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
80
−
100
V
IC=50μA
BVCEO
80
−
100
V
IC=1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
6
−
−
V
IE=5mA
ICBO
−
−
10
μA
VCB=70V
Emitter cutoff current
IEBO
−
−
3
mA
VEB=5V
DC current transfer ratio
hFE
1000
−
2500
−
VCE=3V, IC=0.5A
∗1
Collector-emitter saturation voltage
VCE(sat)
−
−
1.5
V
IC/IB=500mA/1mA
Base-emitter saturation voltage
VBE(sat)
−
−
2
V
IC/IB=500mA/1mA
∗1
Transition frequency
fT
−
80
−
MHz VCB=5V, IE=−0.1A, f=30MHz
∗2
Output capacitance
Cob
−
20
−
pF
VCE=10V, IE=0A, f=1MHz
Turn-on time
Storage time
Fall time
ton
−
0.2
−
μs
IC=0.8A, RL=50Ω
tstg
−
5
−
μs
IB1= −IB2=8mA
tf
−
0.6
−
μs
VCC 40V
∗1 Measured using pulse current. ∗2 Transition frequency of the device.
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2009.12 - Rev.B