2SC4774 Datasheet, PDF (1/3 Pages) Rohm – High frequency amplifier transistor RF switching (6V, 50mA)

Transistors
2SC4774 / 2SC4713K
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
zFeatures
1) Very low output-on resistance (Ron).
2) Low capacitance.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
12
V
VCEO
6
V
VEBO
3
V
IC
50
mA
PC
0.2
W
Tj
150
°C
Tstg
−55 to +150
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SC4774
UMT3
S
BM∗
T106
3000
2SC4713K
SMT3
S
BM∗
T146
3000
zExternal dimensions (Unit : mm)
2SC4774
1.25
2.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
2SC4713K
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.3Min.
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Ron
Min.
Typ.
Max.
Unit
Conditions
12
−
−
V
IC=10µA
6
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA VCB=10V
−
−
0.5
µA VEB=2V
−
−
0.3
V
IC/IB=10mA/1mA
270
−
560
−
VCE/IC=5V/5mA
300
800
−
MHz VCE=5V, IE= −10mA, f=200MHz
−
1
1.7
pF VCB=10V, IE=0A, f=1MHz
−
2
−
Ω IB=3mA, VI=100mVrms, f=500kHz
Rev.A
1/2