2SC4137_09 Datasheet, PDF (1/3 Pages) Rohm – High frequency amplifier transistor, RF switching (6V, 50mA)

High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
12
V
VCEO
6
V
VEBO
3
V
IC
50
mA
PC
0.2
W
Tj
150
°C
Tstg
−55 to +150
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗^{Denotes hFE}
2SC4774
UMT3
S
BM_∗
T106
3000
2SC4713K
SMT3
S
BM_∗
T146
3000
Dimensions (Unit : mm)
2SC4774
2.0
0.3
(3)
0.9
0.2 0.7
(2)
(1)
0.65 0.65
1.3
ROHM : UMT3
EIAJ : SC-70
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2SC4713K
2.9
1.1
0.4
0.8
(3)
(2)
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Ron
Min.
Typ.
Max.
Unit
Conditions
12
−
−
V
IC=10μA
6
−
−
V
IC=1mA
3
−
−
V
IE=10μA
−
−
0.5
μA VCB=10V
−
−
0.5
μA VEB=2V
−
−
0.3
V
IC/IB=10mA/1mA
180
−
560
−
VCE/IC=5V/5mA
300
800
−
MHz VCE=5V, IE= −10mA, f=200MHz
−
1
1.7
pF VCB=10V, IE=0A, f=1MHz
−
2
−
Ω IB=3mA, VI=100mVrms, f=500kHz
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
1/2
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C