2SC4115S_09 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Low Frequency Transistor (20V, 3A)
2SC4115S
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
（IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics.
3) Complements the 2SA1585S.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
2
IC
5
Collector power dissipation
PC
0.4
Junction temperature
Tj
150
Storage temperature
∗ Single pulse Pw=10ms
Tstg
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ∗
W
°C
°C
zDimensions(Unit:mm)
2SC4115S
4±0.2
2±0.2
0.45^{+−00..1055}
2.5^{+−00..41}
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
∗ ^{Denotes hFE}
0.5 ^0.45−+00..0155
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
40
20
6
−
−
−
120
Transition frequency
Output capacitance
∗ Measured using pulse current.
fT
−
Cob
−
Typ.
−
−
−
−
−
0.2
−
290
25
Max.
−
−
−
0.1
0.1
0.5
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
∗
VCE=2V, IC=0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
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2009.11 - Rev.B