2SC4102_11 Datasheet, PDF (1/3 Pages) Rohm – High-voltage Amplifier Transistor

High-voltage Amplifier Transistor (120V, 50mA)
2SC4102 / 2SC3906K
Features
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
50
mA
PC
0.2
W
Tj
150
°C
Tstg
−55 to +150
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗^{Denotes hFE}
2SC4102
UMT3
RS
T∗
T106
3000
2SC3906K
SMT3
RS
T∗
T146
3000
Dimensions (Unit : mm)
2SC4102
1.25
2.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC3906K
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.3Min.
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ. Max.
Unit
Conditions
120
−
−
V
IC=50μA
120
−
−
V
IC=1mA
5
−
−
V
IE=50μA
−
−
0.5
μA VCB=100V
−
−
0.5
μA VEB=4V
−
−
0.5
V
IC/IB=10mA/1mA
180
−
560
−
VCE=6V, IC=2mA
−
140
−
MHz VCE=12V, IE=−2mA, f=100MHz
−
2.5
−
pF VCB=12V, IE=0A, f=1MHz
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2012.01 - Rev.B