2SC3359S Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (80V, 0.3A)

Transistors
Power Transistor (80V, 0.3A)
2SC3359S
2SC3359S
zFeatures
1) High breakdown voltage, BV_CEO=80V
2) Low saturation voltage, typically V_CE(sat) = 0.2V at I_B=0.3A / 0.03A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
V_CBO
80
V
Collector-emitter voltage
V_CEO
80
V
Emitter-base voltage
Collector current
V_EBO
5
V
I_C
0.3
A
Collector power dissipation
PC
0.3
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter outoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
Cob
Min. Typ. Max. Unit
Conditions
80
−
−
V I_C=1mA
80
−
−
V I_C=50µA
5
−
−
V IE=50µA
−
−
0.5
A V_CB=80V
−
−
0.5
A V_EB=4V
−
0.2
0.5
V V_C/I_CB=0.3V/0.03A
120
−
390
−
V_CE=3V, I_C=0.1A
50
150
−
MHz V_CE=5V , I_E= −0.01A , f=100MHz
−
5
8
pF V_CB=10V , I_E=0A , f=1MHz
zPackaging specification and h_FE
Type
2SC3359S
Package
SPT
h_FE
QR
Code
TP
Basic orderin unit (pieces)
5000
Rev.A
1/2