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2SC1741AS_11 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (50V,0.5A)
Data Sheet
Medium Power Transistor (50V,0.5A)
2SC1741AS
Features
1) High current.(IC=5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Dimensions (Unit : mm)
SPT
(SC-72)
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pleces)
2SC1741AS
SPT
QR
-
TP
5000
(1) Emitter
(2) Collector
(3) Bace
(1) (2) (3)
Absolute maximum rationgs (Ta=25 C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.3
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min. Typ. Max. Unit
Conditions
50
-
-
V IC=100 A
50
-
-
V IC=1mA
5
-
-
V IE=100 A
-
-
0.5
A VCB=30V
-
-
0.5
A VEB=4V
120
-
390
- VCE/IC=3V/0.1A
-
-
0.4
V IC/IB=150mA/15mA
-
250
-
MHz VCE=5V , IE=-20mA , f=100MHz
-
6.5
-
pF VCB=10V , IE=0A , f=1MHz
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2011.06 - Rev. B