2SB852K_1 Datasheet, PDF (1/3 Pages) Rohm – High-gain Amplifier Transistor (−32V, −0.3A)

Transistors
2SB852K
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1383K.
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB852K
SMT3
B
U∗
T146
3000
zCircuit diagram
C
zExternal dimensions (Unit : mm)
2SB852K
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
B
RBE 4kΩ
E : Emitter
B : Base
C : Collector
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ RBE=0Ω
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−6
−0.3
0.2
150
−55 to +150
Unit
V
V∗
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
−40
−32
−6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
200
3
Max.
−
−
−
−1
−1
−
−1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC= −100µA
IC= −1mA
IE= −100µA
VCB= −24V
VEB= −4.5V
VCE= −5V, IC= −0.1A
IC= −200mA, IB= −0.4mA
∗1
VCE= −5V, IE=10mA, f=100MHz ∗2
VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2