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2SB852K Datasheet, PDF (1/4 Pages) Rohm – High-gain Amplifier Transistor (-32V, -0.3A) | |||
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Transistors
2SB852K / 2SA830S
High-gain Amplifier Transistor (â32V, â0.3A)
2SB852K / 2SA830S
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4k⦠resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
zCircuit diagram
C
B
RBE 4kâ¦
E : Emitter
B : Base
C : Collector
E
zExternal dimensions (Unit : mm)
2SB852K
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
2SA830S
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
4.0
2.0
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SB852K
SMT3
B
Uâ
T146
3000
2SA830S
SPT
B
â
TP
5000
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SB852K
2SA830S
Junction temperature
Storage temperature
â RBE=0â¦
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
â40
â32
â6
â0.3
0.2
0.3
150
â55 to +150
Unit
V
Vâ
V
A
W
°C
°C
Rev.A
1/3
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