2SB1732 Datasheet, PDF (1/3 Pages) Rohm – Genera purpose amplification(-12V, -1.5A)

Transistors
2SB1732
Genera purpose amplification(−12V, −1.5A)
2SB1732
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −200mV
at IC = −500mA / IB = −25mA
zExternal dimensions (Unit : mm)
(3)
0.2
1.7
0.2
2.1
0.15Max.
ROHM : TUMT3 Abbreviated symbol : EV
(1)Base
(2)Emitter
(3)Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1Single pulse, PW=1ms
∗2Each Terhinal Mounted on a Recommended Land
Limits
−15
−12
−6
−1.5
−3
400
150
−55 to +150
Unit
V
V
V
A
A ^∗1
mW^∗2
°C
°C
zPackaging specifications
Type
2SB1732
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15
−
−
V IC=−10µA
−12
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
−
−85 −200 mV IC=−500mA, IB=−25mA
270
−
680
− VCE=−2V, IC=−200mA ^∗
−
400
−
MHz VCE=−2V, IE=200mA, f=100MHz ^∗
−
12
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2