2SB1730_1 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification(−12V, −2A)

Transistors
2SB1730
General purpose amplification(−12V, −2A)
2SB1730
zApplications
Low frequency amplifier
Deiver
zDimensions (Unit : mm)
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −180mV
at IC= −1A / IB= −50mA
zPackaging specifications
Package
Type
Code
Basic ordering
unit (pieces)
2SB1730
Taping
TL
3000
ROHM : TUMT3
Abbreviated symbol : FV
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−2
A
ICP
−4
A^∗
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
∗ Single pulse Pw=1ms
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −15
Collector-emitter breakdown viltage BVCEO −12
Emitter-base breakdown voltage
BVEBO
−6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collerctor-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
270
Transition frequency
fT
−
Output capacitance
∗ Pulsed
Cob
−
Typ.
−
−
−
−
−
−120
−
360
15
Max.
−
−
−
−100
−100
−180
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC=−1A, IB=−50mA
VCE=−2V, IC=−200mA^∗
VCE=−2V, IE=200mA, f=100MHz^∗
VCB=−10V, IE=0mA, f=1MHz
Rev.B
1/2