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2SB1714 Datasheet, PDF (1/3 Pages) Rohm – -2A / -30V Bipolar transistor | |||
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Transistors
-2A / -30V Bipolar transistor
2SB1714
2SB1714
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE( sat) ⤠-370mV, at IC = -1.5A, IB = -75mA)
zStructure
PNP epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Base
(2)Collector
(3)Emitter
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : XY
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
VCBO
VCEO
VEBO
IC
ICP
â30
V
â30
V
â6
V
â2
A
â4 â1
Power dissipation
0.5 â2
PC
W
2 â3
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150
°C
â1 Pw=1ms, Pulsed.
â2 Each terminal mounted on a recommended land.
â3 Mounted on a 40Ã40Ã0.7mm ceramic board.
zPackaging specifications
Package
MPT3
Packaging type
Taping
Code
T100
Part No.
Basic ordering unit (pieces) 1000
2SB1714
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
â Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat) â
hFE
fT
Cob
Min.
â30
â30
â6
â
â
â
270
â
â
Typ. Max. Unit
Conditions
ââ
IC= â1mA
â â V IC= â10µA
ââ
IE= â10µA
â â100 nA VCB= â30V
â â100
VEB= â6V
â180 â370 mV IC/IB= â1.5A/ â75A
â 680 â VCE= â2V, IC= â200mA
280 â MHz VCE= â2V, IE=200mA , f=100MHz
20 â pF VCB= â10V , IE=0mA , f=1MHz
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