2SB1713 Datasheet, PDF (1/3 Pages) Rohm – -3A / -12V Bipolar transistor

Transistors
-3A / -12V Bipolar transistor
2SB1713
2SB1713
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(Typ. = -250mV, at IC = -1.5A, IB = -30mA)
zStructure
PNP epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Base
(2)Collector
(3)Emitter
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : XW
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
DC
IC
Collector current
Pulse
ICP
−3
A
−6 ∗1
Power dissipation
0.5 ∗2
PC
W
2 ∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
zPackaging specifications
Package
MPT3
Packaging type
Taping
Code
T100
Part No.
Basic ordering unit (pieces) 1000
2SB1713
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat) ∗
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−12 − −
IC= −1mA
−15 − − V IC= −10µA
−6 − −
IE= −10µA
−
− −100 _nA VCB= −15V
− − −100
VEB= −6V
− −120 −250 mV IC/IB= −1.5A/ −30mA
270 − 680 − VCE= −2V, IC= −500mA
− 280 − MHz VCE= −2V, IE=500mA , f=100MHz
− 30 − pF VCB= −10V , IE=0mA , f=1MHz
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