2SB1708_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
2SB1708
2SB1708
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large. (3A)
2) VCE(sat) ≤ −250mV
At IC = ^−1.5A / IB = ^−30mA
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−3
A
ICP
−6
A^∗
Power dissipation
Junction temperature
PC
500
mW
Tj
150
°C
Range of storage temperature Tstg −55 to +150 °C
∗Single pulse, PW=1ms
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SB1708
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC=−10µA
−30
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−30V
−
−
−100 nA VEB=−6V
−
−180 −250 mV IC=−1.5A, IB=−30mA
270
−
680
− VCE=−2V, IC=−200mA ^∗
−
200
−
MHz VCE=−2V, IE=200mA, f=100MHz ^∗
−
40
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.B
1/2