2SB1705_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
2SB1705
2SB1705
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≤ −250mV
At IC=−1.5A / IB=−30mA
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1Single pulse, PW=1ms
∗2Each Termminal Mounted on a Recommended
Limits
−15
−12
−6
−3
−6
500
150
−55 to +150
Unit
V
V
V
A
A^∗1
mW^∗2
°C
°C
zEquivalent circuit
(3)
(1)
(2)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15
−
−
V IC= −10µA
−12
−
−
V IC= −1mA
−6
−
−
V IE= −10µA
−
−
−100 nA VCB= −15V
−
−
−100 nA VEB= −6V
−
−120 −250 mV IC= −1.5A, IB= −30mA
270
−
680
− VCE= −2V, IC= −500mA^∗
−
280
−
MHz VCE= −2V, IE=500mA, f=100MHz^∗
−
30
−
pF VCB= −10V, IE=0A, f=1MHz
Rev.C
1/2