2SB1698_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
2SB1698
2SB1698
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≤ −370mV
at IC =−1A / IB =−50mA
zExternal dimensions (Units : mm)
4.0
1.0
2.5
0.5
(1)
(2)
(3)
Each lead has same dimensions
Abbreviated symbol: FL
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)Base
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−6
Collector current
IC
−1.5
ICP
−3
Power dissipation
500
PC
2
Junction temperature
Tj
150
Range of storage temperature Tstg −55~+150
∗1 Single pulse, PW=1ms
∗2 Mounted on a 40+ 40+ 0.7(mm)CERAMIC SUBSTRATE
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Unit
V
V
V
A
A ^∗1
mW
W ^∗2
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SB1698
Taping
T100
1000
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC=−10µA
−30
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−30V
−
−
−100 nA VEB=−6V
−
−200 −370 mV IC=−1A, IB=−50mA
270
−
680
− VCE=−2V, IC=−100mA ^∗
−
280
−
MHz VCE=−2V, IE=100mA, f=100MHz ^∗
−
13
−
pF VCB=−10V, IE=0A, f=1MHz
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