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2SB1672 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-80V, -7A) | |||
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Transistors
Power Transistor (â80V, â7A)
2SB1672
2SB1672
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = â0.3V at IC / IB =â4A / â0.4A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C).
4) Wide SOA (safe operating area).
5) Complements the 2SD2611.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
â80
â80
â5
â7
â10
2
30
150
â55 â¼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
10.0
Ï 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1672
TO-220FN
EF
â
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
â80
â
â
V
IC = â50µA
Collector-emitter breakdown voltage BVCEO
â80
â
â
V
IC = â1mA
Emitter-base breakdown voltage
BVEBO
â5
â
â
V
IE = â50µA
Collector cutoff current
ICBO
â
â
â10
µA VCB = â80V
Emitter cutoff current
IEBO
â
â
â10
µA VEB = â4V
Collector-emitter saturation voltage
VCE(sat)
â
â
â1
V
IC/IB = â4A/â0.4A
â
Base-emitter saturation voltage
VBE(sat)
â
â
â1.5
V
IC/IB = â4A/â0.4A
â
DC current transfer ratio
hFE
100
â
320
â
VCE/IC = â5V/â1A
Transition frequency
fT
â
12
â
MHz VCE = â5V , IE = 0.5A , f = 5MHz
Output capacitance
Cob
â
200
â
pF VCB = â10V , IE = 0A , f = 1MHz
â Measured using pulse current
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