2SB1668 Datasheet, PDF (1/2 Pages) Rohm – For Power amplification (-100V, -8A)

Transistors
2SB1668
For Power amplification (−100V, −8A)
2SB1668
zStructure
PNP Silicon Epitaxial Planar Transistor
(Darlington connection)
zFeatures
1) High hFE by darlington connection.
2) Built-in resistors between base and emitter.
3) Damper diode is incorporated.
zApplications
Relay drive
Motor drive
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zComplements
PNP
NPN
2SB1668
2SD2607
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Power dissipation
Junction temperature
Range of storage temperature
∗1 t=100ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
Unit
−100
V
−100
V
−7
V
−8
A
−10
A ^∗1
2
W(Ta=25°C)
30 W(Tc=25°C)
150
°C
−55 to +150
°C
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
2SB1668
Taping
−
500
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−100 − − V IC=−5mA
−100 − − V IC=−50µA
−7 − − V IE=−5mA
− − −10 µA VCB=−100V
− − −3 mA VEB=−5V
− − 1.5 V IC/IB=−3A /−6mA
1 − 20 K VCE=−3V, IC=−2A
− 12 − MHz VCE=−5V, IE=0.5A, f=10MHz
− 90 − pF VCB=−10V, IE=0A, f=1MHz
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