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2SB1590K Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-15V, -1A)
Transistors
Power Transistor (-15V, -1A)
2SB1590K
2SB1590K
zFeatures
1) Low saturation voltage, VCE(sat) = -0.3V (Max.)
at IC / IB = -0.4A / -20mA.
2) IC = -1A
3) Complements the 2SD2444K.
zPackaging specification and hFE
Type
2SB1590K
Package
SMT3
hFE
Q
Marking
BK∗
Code
T146
Basic ordering unit (pieces)
∗ Denotes hFE
3000
zExternal dimensions (Unit : mm)
SMT3
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
IC
Collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Limits
−15
−15
−6
−1
−2
0.2
150
−55 to +150
Unit
V
V
V
A (DC)
A (pw=10ms)
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE1
hFE2
fT
Cob
Min.
−15
−15
−6
−
−
−
120
80
−
−
Typ.
−
−
−
−
−
−
−
−
200
15
Max.
−
−
−
−0.5
−0.5
−0.3
270
−
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−12V
VEB=−5V
IC=−0.4A, IB=−20mA
VCE/IC=−2V/−0.5A
VCE=−2V, IC=−800mA
VCE=−2V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2